International Journal of Computer
Trends and Technology

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Volume 4 | Issue 4 | Year 2013 | Article Id. IJCTT-V4I4P125 | DOI : https://doi.org/10.14445/22312803/IJCTT-V4I4P125

Power Reduction and Speed Augmentation in LFSR for Improved Sequence Generation Using Transistor Stacking Method


Vikas Sahu, Mr. Pradeep Kumar

Citation :

Vikas Sahu, Mr. Pradeep Kumar, "Power Reduction and Speed Augmentation in LFSR for Improved Sequence Generation Using Transistor Stacking Method," International Journal of Computer Trends and Technology (IJCTT), vol. 4, no. 4, pp. 560-566, 2013. Crossref, https://doi.org/10.14445/22312803/IJCTT-V4I4P125

Abstract

In many electronics circuit Linear Feedback Shift Register (LFSR) used for generating sequences. So for high performance applications LFSR should have to generate efficient sequences. There are so many methods of generating very efficient sequences. The demand and popularity of portable LFSR is driving designers to strive for small silicon area, higher speeds, low power dissipation and reliability. Compared to static LFSR, dynamic LFSR offers good performance. Wide fan-in logic such as domino LFSR is used in high-performance applications. Dynamic domino LFSRs are widely used in modern digital VLSI circuits. These dynamic LFSRs are often favored in high performance designs because of the speed advantage offered over static LFSR circuits. This paper compares different types of LFSR on the basis of performance parameter such as power consumption, propagation delay and leakage current at 65 nm, 45 nm, 32 nm and 25nm technologies for high performance LFSR design. The techniques are compared by performing detailed transistor simulations on benchmark circuits using Microwind 3 and DSCH 3 CMOS layout CAD tools.

Keywords

LFSR, Leakage current, Power dissipation, Propagation Delay and VLSI.

References

[1] Kelin J. Kuhn, “CMOS Transistor Scaling Past 32nm and Implications on Variation,” IEEE journal of Advanced Semiconductor Manufacturing Conference (ASMC), pp 241-246, Aug 2010.
[2] http://www.Niconprecision.com/ereview/spring_2010/ article05.html.
[3] S. Natarajan, “A 32nm Logic Technology Featuring 2ndGeneration High-k + Metal-Gate Transistors, Enhanced Channel Strain and 0.171µm2 SRAM Cell Size in a 291Mb Array,” IEEE journal of electron Device Meeting (IEDM), pp 1-3, Feb 2009.
[4] Yasuo Nara, “Scaling Challenges of MOSFET for 32nm Node and Beyond,” IEEE Journal of VLSI Scaling, Systems & Application. pp 72-73, april 2009.
[5] Xinlin Wang, Ghavam Shahidi, Phil Oldiges and Mukesh Khare, “Device Scaling of High Performance MOSFET with Metal Gate High-K at 32nm Technology Node and Beyond,” IEEE Journal of simulation of semiconductor processes and devices (SISPAD), pp 309-312, sep 2008.
[6] Chattopadhyay, “Low Power Design Techniques for Nanometer Design Processes - 65nm and Smaller,” IEEE Conference on VLSI Design, pp 5-5, feb 2007.
[7] KAUSHIK ROY, SAIBAL MUKHOPADHYAY, HAMID MAHMOODI MEIMAND, “ Leakage Current Mechanisms and Leakage Reduction Techniques in Deep-Submicrometer CMOS Circuits,” proceedings of IEEE, pp 305-327, april 2003.
[8] Tadayoshi Enomoto, Yoshinori Oka, and Hiroaki Shikano, (2003), “A Self-Controllable Voltage Level (SVL) Circuit and its LowPower High-Speed CMOS Circuit Applications,” IEEE Journal of Solid State Circuits, Vol. 38, No.7, pp.1220-1226.
[9] Chandrakasan, A.P.  Brodersen, “Minimizing power consumption in digital CMOS circuits,” under the Proceedings of the IEEE. pp 498-523, aug 2002.
[10] Richard X. Gu, Mohamed I. Elmasry, “Power Dissipation Analysis and Optimization of Deep Submicron CMOS Digital Circuits,” IEEE journal of Solid-State Circuits, pp 707-713, aug 2002.
[11] P. Srivastava, A. Pua, and L. Welch, .Issues in the Design of Domino Logic Circuits, Proceedings of the IEEE Great Lakes Symposium on VLSI, pp. 108-112, February 1998.
[12] G. Balamurugan and N. R. Shanbhag, .Energy- efficient Dynamic Circuit Design in the Presence of Crosstalk Noise,. Proceedings of the IEEE International Symposium on Low Power Electronics and Design, pp. 24-29, August 1999.
[13] V. Stojanovic and V.G. Oklobdzija, (1999), “Comparitive Analysis of Master Slave Latches  and Flip-Flops for High-performance and Low-Power systems,” IEEE Journal of Solid State Circuits, Vol. 34,No.4, pp.536-548.
[14] Linfeng Li and Jianping Hu, (2009), “A Transmission Gate FlipFlop Based on Dual Threshold CMOS Techniques”, Proceedings of IEEE International Symposium on Circuits and Systems (ISCAS2009), pp. 539-542.
[15] SALENDRA.GOVINDARAJULU*1, DR. T.JAYACHANDRA PRASAD2, Design of High Performance Dynamic CMOS Circuits in Deep Submicron Technology, Salendra Govindarajulu et. al. / International Journal of Engineering Science and Technology Vol. 2(7), 2010, 2903-2917.
[16] Pooja Vaishnav and Mr. Vishal Moyal “Performance Analysis Of 8-Bit ALU For Power In 32 Nm Scale” International Journal of Engineering Research & Technology (IJERT) Vol. 1 Issue 8, October – 2012 ISSN: 2278-0181.
[17] R. Iris Bahar, “Low Power VLSI System Design Lecture 6: State Machine Optimization & MTCMOS,” brown.
[18] M. Janaki Rani1 and S. Malarkann2, LEAKAGE POWER REDUCTION AND ANALYSIS OF CMOS SEQUENTIAL CIRCUITS, International Journal of VLSI design & Communication Systems (VLSICS) Vol.3, No.1, February 2012.
[19] VLSI Design by A.Shanthi Kavita. [20] Principal of VLSI design by Neil H.E.Weste.
[21] Doshi N. A, Dhobale S. B, and Kakade S.R, 2008, “LFSR Counter Implementation in CMOS VLSI”, World Academy of Science, Engineering and Technology 48, 2008.
[22] Siva Narendra, ShekharBorkar,Vivek De, Dimitri Antoniadis, and Anantha Chandrakasan ,(2001) “Scaling of Stack Effect and its Application for Leakage Reduction”, ISLPED ’01, pp. 195-200.
[23] M.C. Johnson, D.Somasekhar, L.Y. Chiou, and K.Roy, (2002), “ Leakage Control with Efficient Use of transistor Stacks in Single threshold CMOS”, IEEE Transactions on Very Large Scale Integration (VLSI) Systems, Vol. 10, No. 1, pp. 1-5. [24] Yuan Chen, “Scaled CMOS Technology Reliability,” by California Institute of Technology, and was sponsored by the National Aeronautics and Space Administration Electronic Parts and Packaging (NEPP) Program, 2008.
[25] “Technology backgrounder: High-k gate oxides,” by IC Knowledge, 2002.
[26] Abhishek Kumar, “LEAKAGE CURRENT CONTROLLING MECHANISM USING HIGH K DIELECTRIC + METAL GATE,” International Journal of Information Technology and Knowledge Management, pp. 191-194, January-June 2012.
[27] http://www.Review –intel 45nm technology.com
[28] http://en.wikipedia.org/wiki/Immertionlithography. Categories: Lithography (micro fabrication).
[29] Xin Wu, Prabhuram Gopalan, and Greg Lara, “Xilinx Next Generation 28 nm FPGA Technology Overview,” by Xilinx white paper.
[30] N. When and M. Munch, “Minimization Power Consumption in Digital Circuits and Systems: an overview,” IEEE Conference on  High Performance System Design: Circuit and Logic, pp 169-259, 1999.